Low Trapping Effects and High Electron Confinement in Short AlN/GaN-on-SiC HEMTs by Means of a Thin AlGaN Back Barrier - Institut d'électronique, de microélectronique et de nanotechnologie Accéder directement au contenu
Article Dans Une Revue Micromachines Année : 2023

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-on-SiC HEMTs by Means of a Thin AlGaN Back Barrier

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In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a nonintentionally doped GaN channel layer, enabling the prevention of punch-through effects and related drain leakage current under a high electric field while using a moderate carbon concentration into the buffer. By carefully tuning the Al concentration into the back barrier layer, the optimized heterostructure offers a unique combination of electron confinement and low trapping effects up to high drain bias for a gate length as short as 100 nm. Consequently, pulsed (CW) Load-Pull measurements at 40 GHz revealed outstanding performances with a record power-added efficiency of 70% (66%) under high output power density at VDS = 20 V. These results demonstrate the interest of this approach for future millimeter-wave applications.
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hal-03952213 , version 1 (23-01-2023)

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Kathia Harrouche, Srisaran Venkatachalam, Lyes Ben-Hammou, François Grandpierron, Etienne Okada, et al.. Low Trapping Effects and High Electron Confinement in Short AlN/GaN-on-SiC HEMTs by Means of a Thin AlGaN Back Barrier. Micromachines, 2023, 14 (2), pp.291. ⟨10.3390/mi14020291⟩. ⟨hal-03952213⟩
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