Design of a high voltage dc-dc converter for automotive applications using 650 V GaN devices - LAAS-Gestion de l'énergie
Communication Dans Un Congrès Année : 2023

Design of a high voltage dc-dc converter for automotive applications using 650 V GaN devices

Résumé

This paper discusses a bidirectional three-level Dual Active Half Bridge (DAHB) DC-DC converter for high voltage on-board charger (OBC) application using 650V GaN on Silicon FETs. The half bridge configuration on each side of the transformer helps reducing the component count and increase the power density. The proposed converter utilizes three-level Active Neutral Point Clamped (ANPC) topology to reduce the voltage stress in all devices allowing the converter to be used in 800V battery systems. The phase-shift PWM (PSPWM) modulation strategy is proposed for controlling the ANPC half-bridge, this modulation strategy is easy to implement and guarantee the even losses distribution and natural voltage balancing across all switching devices. The operation of the proposed three-level DAHB converter is confirmed by the experimental results.
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Dates et versions

hal-04777231 , version 1 (12-11-2024)

Identifiants

  • HAL Id : hal-04777231 , version 1

Citer

Ilias Chorfi, Corinne Alonso, Romain Montheard, Thierry Sutto. Design of a high voltage dc-dc converter for automotive applications using 650 V GaN devices. Symposium de Génie Électrique SGE 2023, Laboratoire d'Electrotechnique et d'Electronique de Puissance de Lille (L2EP), Jul 2023, Lille, France. 4 p. ⟨hal-04777231⟩
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