Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy - Université Polytechnique des Hauts-de-France Access content directly
Journal Articles Nanotechnology Year : 2012

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

Abstract

Using elastic scattering theory we show that a small set of energy dispersive x-ray spectroscopy (EDX) measurements is sufficient to experimentally evaluate the scattering function of electrons in high-angle annular dark field scanning transmission microscopy (HAADF-STEM). We then demonstrate how to use this function to transform qualitative HAADF-STEM images of InGaN layers into precise, quantitative chemical maps of the indium composition. The maps obtained in this way combine the resolution of HAADF-STEM and the chemical precision of EDX. We illustrate the potential of such chemical maps by using them to investigate nanometer-scale fluctuations in the indium composition and their impact on the growth of epitaxial InGaN layers.
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Dates and versions

hal-00747027 , version 1 (12-05-2022)

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Attribution - NonCommercial - CC BY 4.0

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K. Pantzas, G. Patriarche, David Troadec, S. Gautier, T. Moudakir, et al.. Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. Nanotechnology, 2012, 23, pp.455707-455716. ⟨10.1088/0957-4484/23/45/455707⟩. ⟨hal-00747027⟩
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