@inproceedings{fonseca:hal-03382857, TITLE = {{Analysis of Si and GaN GAA-NW-FETs in High-k Gate Oxides for Next Generation Mobile Systems}}, AUTHOR = {Fonseca, Ygor and Nobrega, Rafael and Duarte, Ulysses and Raddo, Thiago and Triwinarko, Andy and Dayoub, Iyad and Sanches, Anderson and Loiola, Murilo}, URL = {https://uphf.hal.science/hal-03382857}, BOOKTITLE = {{12th International Symposium on Communication Systems, Networks and Digital Signal Processing (CSNDSP 2020)}}, ADDRESS = {Porto, Portugal}, PUBLISHER = {{IEEE}}, VOLUME = {24}, PAGES = {1-5}, YEAR = {2020}, MONTH = Jul, DOI = {10.1109/CSNDSP49049.2020.9249531}, KEYWORDS = {Power demand ; Logic gates ; Silicon ; Transistors ; Gallium nitride ; Next generation networking ; Transconductance}, HAL_ID = {hal-03382857}, HAL_VERSION = {v1}, }