Poster Communications
Year : 2017
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https://uphf.hal.science/hal-03552772
Submitted on : Wednesday, February 2, 2022-2:19:48 PM
Last modification on : Friday, March 24, 2023-2:53:25 PM
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- HAL Id : hal-03552772 , version 1
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Mourad Elbar, Bandar Alshehri, Souad Tobbeche, El Hadj Dogheche. Design and simulation of InGaN/GaN p-i-n photodiodes. 12th International Conference on Nitride Semiconductors ICNS-12, Jul 2017, Strasbourg, France. 2018. ⟨hal-03552772⟩
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