[Invited] Size reduction of InGaN/GaN based led devices as a major challenge for boosting light fidelity frequency bandwidth - Université Polytechnique des Hauts-de-France
Communication Dans Un Congrès Année : 2019

[Invited] Size reduction of InGaN/GaN based led devices as a major challenge for boosting light fidelity frequency bandwidth

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Sciences de l'ingénieur [physics] Optique / photonique Acoustique [physics.class-ph]

Julie Cagniard  : Connectez-vous pour contacter le contributeur

https://uphf.hal.science/hal-03572369

Soumis le : lundi 14 février 2022-11:29:28

Dernière modification le : lundi 25 mars 2024-16:09:44

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Dates et versions

hal-03572369 , version 1 (14-02-2022)

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  • HAL Id : hal-03572369 , version 1

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Bandar Alshehri, Karim Dogheche, El Hadj Dogheche. [Invited] Size reduction of InGaN/GaN based led devices as a major challenge for boosting light fidelity frequency bandwidth. 10th International Conference on Materials for Advanced Technologies, ICMAT 2019, Jun 2019, Marina Bay Sands, Singapore. ⟨hal-03572369⟩

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