Comparison of InxGa1-xN/GaN single and multiple quantum well based PIN structures : fabrication and characterization - Université Polytechnique des Hauts-de-France Access content directly
Poster Communications Year : 2015

Comparison of InxGa1-xN/GaN single and multiple quantum well based PIN structures : fabrication and characterization

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hal-03780894 , version 1 (19-09-2022)

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  • HAL Id : hal-03780894 , version 1

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Bandar Alshehri, Karim Dogheche, Sofiane Belahsene, Gilles Patriache, Abderrahim Ramdane, et al.. Comparison of InxGa1-xN/GaN single and multiple quantum well based PIN structures : fabrication and characterization. European Materials Research Society Spring Meeting, E-MRS Spring 2015, May 2015, Lille, France. ⟨hal-03780894⟩
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