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Article Dans Une Revue Journal of Electronic Materials Année : 2023

High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

P. Mondal
  • Fonction : Auteur
Guillaume Ducournau
Yannick Roelens
Mohamed Zaknoune

Résumé

Quasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The epitaxial structure employed had an n− layer of 590 nm with doping 6.6 × 1016 cm−3, while the n+ layer was 950 nm thick, with doping 2 × 1019 cm−3. Potassium hydroxide (KOH) chemical surface treatment before Schottky contact metallization was employed to study its effect in improving the diode parameters. The KOH-treated diode demonstrated a breakdown voltage of − 27.5 V, which is the highest reported for this type of diode. Cut-off frequencies around 500 GHz were obtained at high reverse bias (− 25 V) in spite of high series resistance. The result obtained in breakdown voltage value warrants further research in surface treatment and post-annealing of the Schottky contact optimization in order to decrease the series resistance.

Domaines

Electronique
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Dates et versions

hal-04115301 , version 1 (05-06-2023)

Identifiants

Citer

G. Di Gioia, E. Frayssinet, M. Samnouni, V. Chinni, P. Mondal, et al.. High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers. Journal of Electronic Materials, 2023, 52, pp.5249-5255. ⟨10.1007/s11664-023-10499-3⟩. ⟨hal-04115301⟩
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