Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications
Résumé
A detailed analysis of Off-state gate-oxide breakdown (BD) mode and its location under non-uniform electric field is performed in 28nm fully-depleted silicon-on-insulator (FDSOI) N-MOSFET devices. We show that hard breakdown (HBD) occurs exclusively from the middle of the channel to the drain overlap extension for Off-state time-dependent dielectric-breakdown (TDDB). HBD is characterized under DC stress with different gate-length LG as a function of drain voltage VDS and temperature. We check that the leakage current is the better monitor for TDDB dependence precursor to HBD under Off-mode stress by using the proper modeling and discussing the different possible origin of the higher form factor B value under Off mode stressing.
Origine | Fichiers produits par l'(les) auteur(s) |
---|