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Article Dans Une Revue 2D Materials Année : 2024

Van der Waals epitaxial growth of few layers WSe2 on GaP(111) B

Résumé

Abstract 2D material epitaxy offers the promise of new 2D/2D and 2D/3D heterostructures with their own specific electronic and optical properties. In this work, we demonstrate the epitaxial growth of few layers WSe 2 on GaP(111) B by molecular beam epitaxy. Using a combination of experimental techniques, we emphasize the role of the growth temperature and of a subsequent annealing of the grown layers under a selenium flux on the polytype formed and on its structural and morphological properties. We show that a low growth temperature promotes the formation of the 1T′ and 3R phases depending on the layer thickness whereas a higher growth temperature favours the stable 2H phase. The resulting layers exhibit clear epitaxial relationships with the GaP(111) B substrate with an optimum grain disorientation and mean size of 1.1° and around 30 nm respectively for the 2H phase. Bilayer 2H WSe 2 /GaP(111) B heterostructures exhibit a staggered type II band alignment and p-doped character of the epi-layer on both p and n-type GaP substrates. This first realisation of stable p-type WSe 2 epi-layer on a large-area GaP(111) B substrate paves the way to new 2D/3D heterostructures with great interests in nanoelectronic and optoelectronic applications, especially in the development of new 2D-material p-n junctions.
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hal-04648284 , version 1 (15-07-2024)

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Niels Chapuis, Aymen Mahmoudi, Christophe Coinon, David Troadec, Dominique Vignaud, et al.. Van der Waals epitaxial growth of few layers WSe2 on GaP(111) B. 2D Materials, 2024, 11 (3), pp.035031. ⟨10.1088/2053-1583/ad573a⟩. ⟨hal-04648284⟩
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