150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate - Université Polytechnique des Hauts-de-France
Article Dans Une Revue IEEE Electron Device Letters Année : 2011

150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate

Résumé

This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 μm and transferred onto a 125- μm -thick polyethylene naphthalate foil. The die stack transferred onto the organic substrate comprises the 200-nm-thick active layer and the 5.5- μm -thick interconnection multilayer stack resulting in a light, compact, and bendable thin film. We unveil that dc and RF performances are invariant even for ultimate thinning down to the buried oxide layer. Furthermore, n-MOSFET performance is improved by 1.5× compared with previous work, and the first demonstration of 100-GHz p-MOSFETs on an organic substrate is presented. Unity-current-gain cutoff and maximum oscillation frequencies as high as 150/160 GHz for n-MOSFETs and 100/130 GHz for p-MOSFETs on a plastic substrate have been measured, respectively

Domaines

Electronique
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Dates et versions

hal-00639864 , version 1 (16-09-2024)

Identifiants

Citer

A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Marie Lesecq, Francois Danneville, L. Poulain, et al.. 150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate. IEEE Electron Device Letters, 2011, 32 (11), pp.1510-1512. ⟨10.1109/LED.2011.2166241⟩. ⟨hal-00639864⟩
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