150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate
Résumé
This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 μm and transferred onto a 125- μm -thick polyethylene naphthalate foil. The die stack transferred onto the organic substrate comprises the 200-nm-thick active layer and the 5.5- μm -thick interconnection multilayer stack resulting in a light, compact, and bendable thin film. We unveil that dc and RF performances are invariant even for ultimate thinning down to the buried oxide layer. Furthermore, n-MOSFET performance is improved by 1.5× compared with previous work, and the first demonstration of 100-GHz p-MOSFETs on an organic substrate is presented. Unity-current-gain cutoff and maximum oscillation frequencies as high as 150/160 GHz for n-MOSFETs and 100/130 GHz for p-MOSFETs on a plastic substrate have been measured, respectively
Domaines
Electronique
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2011-Lecavelier-EDL-150-GHz_RF_SOI-CMOS-hal.pdf (689.52 Ko)
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