Phase change materials for embedded memory automotive applications are dynamically evolving with the aim of high temperature data retention [1]. This requires higher crystallization temperature and amorphous phase stability, which was achieved by increasing the Germanium content and doping with Nitrogen in the traditional Ge2Sb2Te5 (GST-225) [2]. Here, we study the temperature dependent structural evolution of Ge-rich GST (GGST) and Ge-rich GST N-doped (GGSTN). The spectra of this ternary alloy is composed of Ge-Te vibrations arising from distorted octahedral (o) and tetrahedral units (t), Sb-Te vibrations and Ge-Ge vibrations. We observed an increase in crystallization temperature (TC) by 40°C between GGST and GGSTN signified by change of amorphous Ge vibrations at 275 cm-1 to crystalline Ge vibrations at 300 cm-1 (Fig (1,2)). The vibrations in amorphous phase displayed thermal stability with no significant structural changes below the crystallization temperature. Further, in-situ measurements revealed the temperature dependence of vibrations showing weak sensitivity of Ge-Te vibrations to temperature compared to Sb-Te and Ge-Ge vibrations. The sensitivity of vibrations to temperature in GGST and GGSTN was found out to be different. For both GGST and GGSTN, SbTe vibrations in amorphous phase and crystalline Ge-Ge vibrations displayed a strong linear dependence on temperature. In amorphous phase, the Sb-Te vibrations sensitivity was-0.018 cm-1 K-1 in GGST, whereas in GGSTN was-0.015 cm-1 K-1 which can be a consequence of N-doping. Similarly, for crystalline phase, Ge-Ge vibrations sensitivity was extracted to be-0.019 cm-1 K-1 in GGST and-0.021 cm-1 K-1 in GGSTN. These temperature calibration coefficients are crucial for extracting the power sensitivity of these vibrations and hence, the global thermal conductance of thin films. Finally, we were successful in extraction of temperature dependent thermal conductivity for this ternary alloy aided with finite element simulations.