Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel - Université Polytechnique des Hauts-de-France
Article Dans Une Revue IEEE Transactions on Electron Devices Année : 1996

Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel

Résumé

Sub-0.1 micron planar and gate recessed MOSFET's are investigated using both drift-diffusion and Monte Carlo simulations. In nonplanar devices, the influence of the gate corner explains that the threshold voltage roll-off can be almost suppressed. A steeper subthreshold slope (low swing) is also obtained for a channel length shorter than 50 nm when the recessed channel MOSFET is compared to its planar counterpart. The influence of the corner effect on high-current performances is also considered in relation with the electric field profile along the Si/SiO2 interface.
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Dates et versions

hal-04246714 , version 1 (18-09-2024)

Identifiants

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P.-H. Bricout, Emmanuel Dubois. Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel. IEEE Transactions on Electron Devices, 1996, 43 (8), pp.1251-1255. ⟨10.1109/16.506776⟩. ⟨hal-04246714⟩
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