Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel
Résumé
Sub-0.1 micron planar and gate recessed MOSFET's are investigated using both drift-diffusion and Monte Carlo simulations. In nonplanar devices, the influence of the gate corner explains that the threshold voltage roll-off can be almost suppressed. A steeper subthreshold slope (low swing) is also obtained for a channel length shorter than 50 nm when the recessed channel MOSFET is compared to its planar counterpart. The influence of the corner effect on high-current performances is also considered in relation with the electric field profile along the Si/SiO2 interface.
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1996-Bricout-TED-Short-channel_effect_immunity-hal.pdf (1.52 Mo)
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