Electro-optical analysis of 30% InGaN/GaN MQW LED devices - Université Polytechnique des Hauts-de-France
Communication Dans Un Congrès Année : 2019

Electro-optical analysis of 30% InGaN/GaN MQW LED devices

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hal-03552932 , version 1 (02-02-2022)

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  • HAL Id : hal-03552932 , version 1

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Kutsal Bozkurt, Orhan Özdemir, Neslihan Ayarci Kuruoğlu, Bandar Alshehri, Karim Dogheche, et al.. Electro-optical analysis of 30% InGaN/GaN MQW LED devices. 10th International Conference on Materials for Advanced Technologies, ICMAT 2019, Jun 2019, Marina Bay Sands, Singapore. ⟨hal-03552932⟩
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