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https://uphf.hal.science/hal-03553190
Submitted on : Wednesday, February 2, 2022-4:32:20 PM
Last modification on : Friday, March 24, 2023-2:53:25 PM
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- HAL Id : hal-03553190 , version 1
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Bandar Alshehri, Karim Dogheche, Didier Decoster, El Hadj Dogheche. Synthesis of In0.1Ga0.9N/GaN and In0.2Ga0.8N/GaN PIN photodiode in single and multiple quantum well absorbent layer configuration : fabrication and characterization. 15èmes Journées Nano, Micro et Optoélectronique, JNMO 2016, May 2016, Les Issambres, France. ⟨hal-03553190⟩
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