Synthesis of In0.1Ga0.9N/GaN and In0.2Ga0.8N/GaN PIN photodiode in single and multiple quantum well absorbent layer configuration : fabrication and characterization - Université Polytechnique des Hauts-de-France Accéder directement au contenu
Poster Année : 2016

Synthesis of In0.1Ga0.9N/GaN and In0.2Ga0.8N/GaN PIN photodiode in single and multiple quantum well absorbent layer configuration : fabrication and characterization

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hal-03553190 , version 1 (02-02-2022)

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  • HAL Id : hal-03553190 , version 1

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Bandar Alshehri, Karim Dogheche, Didier Decoster, El Hadj Dogheche. Synthesis of In0.1Ga0.9N/GaN and In0.2Ga0.8N/GaN PIN photodiode in single and multiple quantum well absorbent layer configuration : fabrication and characterization. 15èmes Journées Nano, Micro et Optoélectronique, JNMO 2016, May 2016, Les Issambres, France. ⟨hal-03553190⟩
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