Oxidation behavior of Al-doped Ti3SiC2-20 wt.%Ti5Si3 composite - Université Polytechnique des Hauts-de-France
Article Dans Une Revue Ceramics International Année : 2021

Oxidation behavior of Al-doped Ti3SiC2-20 wt.%Ti5Si3 composite

Bendiba Guedouar
  • Fonction : Auteur
Youcef Hadji
  • Fonction : Auteur
Abdessabour Benamor
  • Fonction : Auteur
Nabil Chiker
  • Fonction : Auteur
Adel Haddad
  • Fonction : Auteur
Jean-Pierre Erauw
  • Fonction : Auteur
Vedi Dupont
  • Fonction : Auteur
Fayçal Hadj-Larbi
  • Fonction : Auteur
Mohamed Amine Soualili
  • Fonction : Auteur
Mohamed Hadji
  • Fonction : Auteur

Résumé

In this work, an aluminum-doped Ti3SiC2-20 wt.% Ti5Si3 composite was prepared through reactive spark plasma sintering (SPS) from a powder mixture of Ti, SiC, C, and Al. The microstructure evolution of the formed oxide scales onto this composite were investigated in the temperature range of 1000–1400 °C in air. Up to 1200 °C, the exposed surfaces were highly protected by a continuous and dense α-Al2O3 layer with a good adherence that acts as a barrier diffusion. Above this temperature, the breakaway oxidation occurs, leading to an oxidation speed-up, which results in a thick oxide scale formation with low oxidation protective capacity. Scanning electron microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), X-Ray Diffraction (XRD), and Raman spectroscopy analysis of the oxide scales at different temperatures revealed that Al2TiO5 grain growth is the main deterioration factor of the protective α-Al2O3 layer. The oxidation kinetics of this composite at 1100 °C is comparable with that of the best MAX phases in terms of oxidation resistance, with a parabolic rate constant (Kp) of 3.08 × 10−10 kg2/m4s.
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Dates et versions

hal-04475396 , version 1 (23-02-2024)

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Citer

Bendiba Guedouar, Youcef Hadji, Abdessabour Benamor, Nabil Chiker, Adel Haddad, et al.. Oxidation behavior of Al-doped Ti3SiC2-20 wt.%Ti5Si3 composite. Ceramics International, 2021, 47 (23), pp.33622-33631. ⟨10.1016/j.ceramint.2021.08.272⟩. ⟨hal-04475396⟩
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