Size reduction of InGaN/GaN based led devices as a major challenge for boosting light fidelity frequency bandwidth - Université Polytechnique des Hauts-de-France Access content directly
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hal-03572369 , version 1 (14-02-2022)

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  • HAL Id : hal-03572369 , version 1

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Bandar Alshehri, Karim Dogheche, El Hadj Dogheche. Size reduction of InGaN/GaN based led devices as a major challenge for boosting light fidelity frequency bandwidth. 10th International Conference on Materials for Advanced Technologies, ICMAT 2019, Jun 2019, Marina Bay Sands, Singapore. ⟨hal-03572369⟩
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